Method of manufacturing a semiconductor device having a resistor

Details Method of manufacturing a semiconductor device having a resistor Method of manufacturing a semiconductor device having a resistor

1989-06-06

1992-06-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 22, 437 46, 437918, 148DIG136, H01L 21265

Patent

active

051262770

ABSTRACT:
After doping a conductive layer made of a semiconductive material with impurites, a conductive layer with a deep trap level is formed by low temperature annealing. For forming such a conductive layer with a deep level, lattice defects are introduced into a conventional conductive layer through ion implantation and after that, only stable lattice defects, that can work as deep levels, remain by annealing at low temperature.

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