Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-12-18
1998-06-30
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
204426, 204425, 204429, 204427, 204408, 4271263, 4271264, 264618, 257701, G01N 27406, G01N 27407, H01B 312, C04B 3548
Patent
active
057738947
ABSTRACT:
An insulation layer system, in particular for gas sensors, is proposed, having at least one electrically conductive solid-electrolyte layer (10), an electrically conductive layer (20) and at least one electrically insulating layer (13) between the solid-electrolyte layer (10) and the electrically conductive layer (20). The material of the insulating layer (13) contains, prior to sintering, pentavalent metal oxides of niobium or tantalum as an additive, it being possible for the additive to diffuse into the adjoining solid-electrolyte layer (10) during sintering.
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De La Prieta Claudio
Friese Karl-Hermann
Geier Heinz
Gruenwald Werner
Robert & Bosch GmbH
Thomas Tom
Williams Alexander Oscar
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