Power diode

Details Power diode Power diode

1993-01-19

1998-06-30

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Conductivity modulation device

257594, 257653, 257654, 257657, H01L 2358

Patent

active

057738580

ABSTRACT:
A power diode includes at least one semiconductor body having an inner zone f a first conductivity type and a given doping level, a cathode zone of the first conductivity type and a doping level higher than the given doping level, and an anode zone of a second conductivity type opposite the first conductivity type and a doping level higher than the given doping level. The inner zone has at least a first region with a first predetermined thickness being dimensioned for a required blocking voltage and a second region with a second thickness being greater than the first predetermined thickness by at least a factor of 1.4. The area and/or the minority carrier life of first and second partial diodes is dimensioned for causing a current flowing through the first partial diode in a conductive phase to be greater than a current flowing through the second partial diode by at least a factor of 2.

REFERENCES:
patent: 4587547 (1986-05-01), Amemiya et al.
patent: 5063428 (1991-11-01), Schlaugenotto et al.

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