Method of making an array device with buried interconnects

Details Method of making an array device with buried interconnects Method of making an array device with buried interconnects

1990-01-16

1992-01-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 48, 437 52, 437192, 437200, H01L 2170

Patent

active

050844180

ABSTRACT:
Bitlines (34) are formed by creating a diffused region (26) around the sidewalls and bottom of a trench (20). The trench (20) is filled with a conductive region (30), typically a refractory metal, refractory metal silicide.

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Ghate, "Interconnections in VLSI", Physics Today, Oct. 1986, pp. 58-66.

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