Method for patterned heteroepitaxial growth

Details Method for patterned heteroepitaxial growth Method for patterned heteroepitaxial growth

1990-06-26

1992-01-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 89, 437 90, 437 99, 437944, 437947, 148 334, 148DIG100, 148DIG161, H01L 2120, H01L 21308

Patent

active

050844091

ABSTRACT:
Shadow masking layer (130) is undercut during etch of sidewall layer (120) thus preventing sidewall growth during growth of heteroepitaxial region (140), resulting in a planar structure with a high integrity of crystal in the grown region (140).

REFERENCES:
patent: 3995303 (1976-11-01), Nahory et al.
patent: 4111725 (1978-09-01), Cho
patent: 4447904 (1984-05-01), Burnham
patent: 4551394 (1985-11-01), Betsch
patent: 4587717 (1986-05-01), Daniele
patent: 4614564 (1986-09-01), Shelson
patent: 4883770 (1989-11-01), Dohler et al.
patent: 4910164 (1990-05-01), Shichijo
Selective Lift-off for Preferential Growth with Molecular Beam Epitaxy.
A. Y. Cho et al. IEEE Jr., Electron Device p. 1186, ED-24, No. 9, Sep. 1977.
Patterned growth of gallium arsenide on silicon R. J. Matyi J. Vac. Sci & Tech B 6(2) 699, 1988.
Selective area growth of GaAs/AlxGa1-xAs multilayer structures with MBE using Si shadow masks Appl. Phys. Lett. 31(4) 301, 1977, W. T. Tsang.
Growth and patterning of AgAs/Ge single crystal layers on Si substrates by MBE, P. Sheldon Appl. Phys. Lett 45(3) 274, 1984.

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