Method of manufacturing a semiconductor device including connect

Details Method of manufacturing a semiconductor device including connect Method of manufacturing a semiconductor device including connect

1991-03-13

1992-01-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437192, 437194, H01L 2120

Patent

active

050844032

ABSTRACT:
A method of forming a semiconductor device. An insulating film is formed on a semiconductor region including an impurity. A first contact hole which reaches the semiconductor region is formed in the insulating film. A monocrystalline semiconductor film is formed on the portion of the semiconductor region which is exposed by the first contact hole, and on the insulating film. A monocrystalline aluminum film is formed on the monocrystalline semiconductor film. The portion of the aluminum film in the first contact hole is removed, thereby forming in the aluminum film a second contact hole, which overlaps the first contact hole. Thereafter, a tungsten film is formed in the second contact hole.

REFERENCES:
patent: 4960732 (1990-10-01), Dixit et al.
patent: 4961822 (1990-10-01), Liao et al.
patent: 4996133 (1991-02-01), Brighton et al.

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