Surface emission type semiconductor for laser with optical detec

Details Surface emission type semiconductor for laser with optical detec Surface emission type semiconductor for laser with optical detec

1997-11-26

1998-12-08

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 96, 438 24, H01S 319, H01S 308, H01L 2120

Patent

active

058480889

ABSTRACT:
A surface emission type semiconductor laser having an optical detector which can satisfactorily assure both the laser emission characteristics of the photoemitter and the optical-to-electrical conversion efficiency. The laser comprises a first conducting semiconductor layer and a second conducting semiconductor layer formed on first and second regions of a semiconductor substrate. Over the second conducting semiconductor layer on the first region is formed an optical resonator which emits light perpendicular to the plane of the semiconductor substrate. On the second region, at least one photodiode is formed by the first and second conducting semiconductor layers. On the first region the second conducting semiconductor layer is formed with a thickness of at least 1 .mu.m, and is used as a lower electrode for supplying a current to the optical resonator. On the second region, the second conducting semiconductor layer forming the at least one photodiode is formed with a thickness of less than 1 .mu.m after etching.

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