Post-CMP wet-HF cleaning station

Details Post-CMP wet-HF cleaning station Post-CMP wet-HF cleaning station

1998-04-10

2000-10-03

Coe, Philip R.

Cleaning and liquid contact with solids

Apparatus

Sequential work treating receptacles or stations with means...

134199, 134902, B08B 300

Patent

active

06125861&

ABSTRACT:
The present invention provides an apparatus for cleaning semiconductor workpieces following a Chemical Mechanical Planarization ("CMP") procedure. Initially, a workpiece is scrubbed to remove some of the slurry material and other contaminants on the surfaces of the workpiece. Next, the workpiece is transported into a chemical-etch cleaning station wherein the workpiece is positioned horizontally such that both the upper and lower surfaces are substantially exposed. The workpiece then is immersed in a cleaning solution which is moved around the various surfaces of the workpiece. The workpiece is immersed in the cleaning solution for a sufficient length of time to remove an appropriate layer of oxide, thereby removing contaminants and smoothing micro scratches from the surfaces of the workpiece.

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