Semiconductor diode laser, and method of manufacturing thereof

Details Semiconductor diode laser, and method of manufacturing thereof Semiconductor diode laser, and method of manufacturing thereof

1997-12-11

2000-06-20

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 25, H01S 319

Patent

active

060786035

ABSTRACT:
A diode laser is disclosed that is self-pulsating without an increase in the starting current or a decrease in the efficiency. A special coating on an end face of the laser comprises in order a first mirror, a medium having an optical thickness which is at least substantially equal to an integer number of times half the wavelength of the generated electromagnetic radiation, and a second mirror. The coating comprises exclusively materials which have a higher bandgap value than that which corresponds to the wavelength of the generated radiation, while the reflectivities of the mirrors and the deviation of the optical thickness of the medium with respect to an integer number of times half the emission wavelength are chosen such that the group velocity dispersion (GVD) adjacent the wavelength of the generated electromagnetic radiation is negative, and preferably a minimum. Pulse widening owing to pulses arising from automatic mode locking is no longer possible due to a sufficiently negative group velocity dispersion. A laser exhibiting stable self-pulsation is thus provided.

REFERENCES:
patent: 3849738 (1974-11-01), Hakki
patent: 4317086 (1982-02-01), Scifres et al.
patent: 4337443 (1982-06-01), Umeda et al.
patent: 4635263 (1987-01-01), Mollenauer
"Compression of Femtosecond Optical Pulses with Dielectric Multilayer Interferometers" J. Kuhl et al, IEEE Transactions on Quantum Electronics, vol. QE-22, No. 1, Jan. 1986, p. 182-185.

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