Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1986-06-04

1989-04-04

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 357 17, H01S 319

Patent

active

048192449

ABSTRACT:
A V-channel inner stripe semiconductor laser device comprising a multi-layered growth crystal having an active layer for laser oscillation but no substrate, with a buffer layer formed on the multi-layered growth crystal thicker than all of the layers of the growth crystal, where the multi-layered growth crystal and buffer layer are sandwiched between an n-sided electrode and a p-sided electrode, wherein a pair of mesa-striped channels are formed outside of the V-channel to remove the outside of the optical waveguide formed in the active layer corresponding to the V-channel.

REFERENCES:
patent: 4592062 (1986-05-01), Yamamoto et al.
Applied Physics Letter, vol. 41, No. 9, Nov. 1, 1982, pp. 796-798, American Inst. of Physics, New York, US; S. Yamamoto et al.
IEEE Journal of Quantum Electronics, vol. QE-19, No. 6, Jun. 1983, pp. 1009-1015, IEEE, New York, US; S. Yamamoto et al.
IEEE Journal of Quantum Electronics, vol. QE-21, No. 3, Mar. 1985, pp. 271-277, IEEE, New York, US; J.-M. Liu et al.
Patent Abstracts of Japan, vol. 8, No. 200, (E-266), (1637), Sep. 13, 1984; & JP-A-59 87 889, (Fujitsu K.K.) 05-21-1984.
Patent Abstracts of Japan, vol. 5, No. 167, (E-79), (839), Oct. 24, 1981; & JP-A-56 96 890, (Fujitsu K.K.) 08-05-1981.

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