Semiconductor device and process for making the same

Details Semiconductor device and process for making the same Semiconductor device and process for making the same

1978-02-23

1981-06-02

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29576C, 29577R, 29578, 29589, H01L 2170, H01L 2190

Patent

active

042702623

ABSTRACT:
A first semiconductor circuit element including a first electrode is formed on a semiconductor substrate, an inter-layer insulating layer for insulating the first electrode is formed on the first electrode, and a first penetrating opening is provided in a part of the inter-layer insulating layer.
Subsequently, a step of forming a second semiconductor circuit element is carried out, this step including a step of forming a second electrode so that at least a part thereof may overlie the inter-layer insulating layer at an area other than the first penetrating opening. Further, a subsidiary interconnection conductive layer is buried into the first opening. Another insulating layer is formed on the structure thus formed, whereupon second and third penetrating openings are respectively provided in the insulating layer over the second electrode and the interconnection subsidiary conductive layer.
First and second interconnection conductors are respectively buried into the second and third penetrating openings. The first electrode is conductively connected with the second interconnection conductor in the third opening via the subsidiary interconnection conductive layer in the first opening. The second electrode is conductively connected with the first interconnection conductor in the second opening.

REFERENCES:
patent: 3570114 (1971-03-01), Bean
patent: 3838442 (1974-09-01), Humphreys

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