Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1999-07-23
2000-06-20
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257760, 257296, 257306, 438253, 438396, 438622, 438625, H01L 2352, H01L 2940, H01L 2348
Patent
active
060781068
ABSTRACT:
A semiconductor memory device, which has metal wirings on interlayer insulating films having a step on a border portion between a memory cell array region and a peripheral circuit region, and which can prevent a short-circuit between adjacent metal wirings to allow a cell area thereof to be reduced, is provided. No metal wiring is provided on a first interlayer insulating film formed on the border portion and having a large step. Connecting wirings are provided on a second interlayer insulating film formed on the border portion and having a small step to connect metal wirings of a first metal wiring layer.
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Monin, Jr. Donald L.
NEC Corporation
Pham Hoai
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