Radiation hard, high emitter-base breakdown bipolar transistor

Details Radiation hard, high emitter-base breakdown bipolar transistor Radiation hard, high emitter-base breakdown bipolar transistor

1978-12-27

1989-11-14

Clawson, Jr., Joseph E.

H01L 2972

Patent

active

048811114

ABSTRACT:
A vertical bipolar transistor including a base having impurity concentration equal in order of magitude to and being formed in the surface of an emitter, a collector having impurity concentration at least two orders of magnitude greater than and being formed in the surface of the base, and a ring having the same impurity conductivity type as the base, having impurity concentration at least three orders of magnitude greater than the base's and being formed at the junction of and in the surfaces of the base and emitter. The ring extends from the surface at to least the depth of the collector and not greater than the depth of the base.

REFERENCES:
patent: 3657612 (1972-04-01), Weidmann
patent: 3880676 (1975-04-01), Douglas et al.
patent: 4047217 (1977-09-01), McCaffrey et al.
patent: 4075039 (1978-02-01), Sloan
patent: 4076556 (1978-02-01), Agraz-Guerena et al.
patent: 4130826 (1978-12-01), Bachle et al.
R. Warner et al., "Integrated Circuits-Design Prin. & Fab.", .COPYRGT. 1965, Motorola, Inc., TK 7870M63, p. 67.
"The First Motorola Dual J-FET . . . ", Electronics, Nov. 9, 1970, (Un-Numbered Page).

Affiliated with

Also associated with

Rating

Radiation hard, high emitter-base breakdown bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Radiation hard, high emitter-base breakdown bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation hard, high emitter-base breakdown bipolar transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1855559