Semiconductor device

Details Semiconductor device Semiconductor device

1988-03-24

1989-11-14

Hille, Rolf

357 231, 357 54, H01L 2978, H01L 2934

Patent

active

048811084

ABSTRACT:
A semiconductor device includes source and drain regions, a charge accumulation region, and a control gate in a channel region between the source and drain regions. The charge accumulation region is located on the side surface of the control gate.

REFERENCES:
patent: 4527259 (1985-07-01), Watanabe
patent: 4754320 (1988-06-01), Mizutani et al.
Chen, P. C. "Threshold-Alterable Si-Gate MOS Devices", IEEE Transactions on Electron Devices, vol. ED-24, No. 5, May 1977, pp. 584-586.
Chan et al., "A True Single-Transistor Oxide-Nitride-Oxide EEPROM Deivce," IEEE Electron Device Letters, vol. EDL-8, No. 3, Mar. 1987, pp. 93-95.

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