Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1996-10-15
1998-05-19
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 98, 257103, 257622, H01L 3300
Patent
active
057539405
ABSTRACT:
In a compound semiconductor LED, a groove is formed at a peripheral area of a chip constituting LED, the groove having a depth penetrating from the light output plane into a light emitting layer of LED. An angle .theta..sub.1 (0.ltoreq..theta..sub.1 <90.degree.) and an angle .theta..sub.2 (0.ltoreq..theta..sub.1 <90.degree.) satisfy the following formula: -arcsin (n.multidot.sin .theta..sub.1)}
)!.gtoreq.1
where the angle .theta..sub.1 is an angle between the surface of a side wall at the inner side of the groove cutting the light emitting layer and the surface vertical to the chip front surface, the angle .theta..sub.2 is an angle between the surface of a side wall at the outer side of the groove cutting the light emitting layer and the surface vertical to the chip front surface, n1 is a refractive index of the light emitting layer, n2 is a refractive index of material embedded in the groove, and n=n1
2.
REFERENCES:
* Note: English Abstracts of Japanese Patent Laid-open Publications Nos. 61-125092, 1-312871, and 7-131066 are provided herewith. No date.
Kabushiki Kaisha Toshiba
Tran Minh-Loan
LandOfFree
Light-emitting diode having narrow luminescence spectrum does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light-emitting diode having narrow luminescence spectrum, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light-emitting diode having narrow luminescence spectrum will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1855378