Multilayer thin film, substrate for electronic device, electroni

Details Multilayer thin film, substrate for electronic device, electroni Multilayer thin film, substrate for electronic device, electroni

1995-09-07

1998-05-19

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

257 31, 257635, 257636, 257637, H01L 2906, H01L 2358

Patent

active

057539340

ABSTRACT:
A multilayer thin film of the invention has an oxide thin film formed on a semiconductor single crystal substrate, and the oxide thin film includes at least one epitaxial thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium). Included is an oriented thin film formed on the oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface. Consequently, there are provided a perovskite oxide thin film of (001) orientation, a substrate for an electronic device comprising the thin film, and a method for preparing the thin film.

REFERENCES:
patent: 5185829 (1993-02-01), Yamada et al.

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