Facedown-type semiconductor pressure sensor with spacer

Details Facedown-type semiconductor pressure sensor with spacer Facedown-type semiconductor pressure sensor with spacer

1988-04-11

1989-11-14

Shaw, Clifford C.

Electrical resistors

Strain gauge type

Fluid- or gas pressure-actuated

338 42, G01L 122

Patent

active

048810568

ABSTRACT:
A facedown-type semiconductor pressure sensor has a Si sensing element including a diaphragm, a spacer, and a piezoresistive device embedded in the diaphragm, and a pedestal. The spacer, which is positioned between the semiconductor substrate and the pedestal, has a photolitho-graphically etched hole such that the sensing element, the hole and the pedestal define a sealed chamber. The sealed pressure chamber is substantially aligned with the diaphragm.

REFERENCES:
patent: 4068206 (1978-01-01), Popp

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