Crystallization furnace for material with low thermal conductivi

Details Crystallization furnace for material with low thermal conductivi Crystallization furnace for material with low thermal conductivi

1996-11-08

1998-06-30

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117204, 117900, C30B 3500

Patent

active

057727619

ABSTRACT:
The invention concerns a crystallization furnace for a material with low thermal conductivity arid/or low hardness.
This furnace can obtain high quality single crystals.
This furnace comprises a heating chamber (1), heating means (13) to create a temperature profile along the center line of said chamber and thus define at least one heating zone (3), and at least one cooling zone (5) and a crucible (9) filled with a solution of a solute to be crystallized in a solvent, said crucible (9) being fixed and placed in the heating chamber (1) in the heating zone (3), characterized in that the furnace also comprises:

REFERENCES:
patent: 4190486 (1980-02-01), Kyle
patent: 4197273 (1980-04-01), Dusserre et al.
patent: 5169486 (1992-12-01), Young et al.
Journal of Crystal Growth, vol. 47, No. 3, Sep. 1979, Amsterdam NL, pp. 449-457, Le Gal et al., "Crystal growth by the thermic screen translation technique . . . ".
Journal of Crystal Growth, vol. 21, Jan. 1974, Amsterdam NL, pp. 135-140, Chang et al., "Control of interface shape in the vertical bridgman stockbarger technique".
Patent Abstracts of Japan, vol. 18, No. 625 (C-1279), Nov. 29, 1994, & JP-A-62 039685 (Kawatetsu Mining Co. Ltd.).

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