Method of making a semiconductor light-emitting device utilizing

Details Method of making a semiconductor light-emitting device utilizing Method of making a semiconductor light-emitting device utilizing

1978-10-02

1980-02-12

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29569L, 29578, 29580, 148 15, 148171, 148173, 331 945H, 357 16, 357 17, 357 18, 357 56, 357 59, 427 87, H01L 21203, H01L 2194

Patent

active

041882440

ABSTRACT:
In order to decrease threshold current of a semiconductor laser, and to obtain a single mode lasing suitable for use in light-communication, the semiconductor laser is formed in stripe type in which the light-emitting (i.e., active) layer and neighboring layers are formed in mesa-etched stripe type and low impurity-concentration (i.e., high resistivity) layers of GaAs, GaAsP or GaAlAs are situated to contact the mesa-etched side faces of the stripe-shaped part on the semiconductor device by vapor phase growth, vacuum deposition, sputtering, or molecular beam deposition. Since the wafer temperature can be kept fairly low (e.g. 400.degree.-700.degree. C.) in comparison with that (about 950.degree. C.) in a liquid phase growth, the stress introduced during the deposition is smaller than that in a liquid phase growth.

REFERENCES:
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patent: 4048627 (1977-09-01), Ettenberg et al.
patent: 4077817 (1978-03-01), Bellavance
patent: 4121177 (1978-10-01), Tsukada
patent: 4121179 (1978-10-01), Chinone et al.
Light et al., "An Integration Approach for Gr" IBM Tech. Discl. Bull., vol. 9, No. 10, Mar. 1967, pp. 1446-1447.
Tsukada, T., "GaAs-GaAlAs Buried-Heterostructure Injection Lasers" J. Applied Physics, vol. 45, No. 11, Nov. 1974, pp. 4899-4906.

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