Manufacturing process of a semiconductor memory device including

Details Manufacturing process of a semiconductor memory device including Manufacturing process of a semiconductor memory device including

1996-02-20

1998-05-19

Niebling, John

Fishing, trapping, and vermin destroying

437203, 437919, H01L 2170

Patent

active

057535264

ABSTRACT:
A method of manufacturing process of a semiconductor device, including the steps of forming a plurality of first trenches in a checkered configuration in a substrate, each of the first trenches having an opening; introducing a first conductivity type impurity from a surface of the substrate so as to form a first conductivity type well in a upper portion of the substrate; forming a capacitor insulating film on a surface of each of the first trenches and burying a storage electrode in each of the first trenches so as to form a trench capacitor in each of the first trenches; burying a first silicon film on each of the storage electrodes of the trench capacitors in the first trenches, etching back each of portions of the first silicon film and removing each of portions of the capacitor insulating films so as to expose portions of side surfaces of the first conductivity type well facing the first trenches; burying a second silicon film doped with a second conductivity type impurity in each of concave portions surrounded by the first silicon films and exposing side surfaces of the first conductivity type well facing the first trenches, and introducing second conductivity type impurities to the first conductivity type well so as to form source regions; and burying a first insulation material on the first and second silicon films in each of the first trenches.

REFERENCES:
patent: 5470778 (1995-11-01), Nagata et al.
patent: 5521115 (1996-05-01), Park et al.
patent: 5545583 (1996-08-01), Lam et al.
patent: 5547889 (1996-08-01), Kim
patent: 5573969 (1996-11-01), Kim
patent: 5583075 (1996-12-01), Ohzu et al.

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