Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1998-11-12
2000-06-20
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438693, 438959, H01L 21302
Patent
active
060777850
ABSTRACT:
The above objects and others are accomplished by a chemical mechanical polishing method and apparatus in accordance with the present invention. The apparatus includes a polishing pad having a polishing surface, and a wafer carrier for supporting a wafer disposed opposite to the polishing pad. The wafer carrier is positionable in a plane that is substantially parallel with the polishing surface, such that a surface of the wafer can be polished by contacting the polishing pad. The polishing surface and the wafer carrier are moved in parallel relative motion to mechanically abrade the wafer surface against the polishing surface in the presence of a polishing slurry. A slurry source containing the polishing slurry is connected to a slurry dispense line to dispense the slurry onto the polishing surface of the polishing pad. An acoustic energy source is positioned relative to transmit acoustic energy into the slurry to break up agglomerated particles in the slurry before the polishing slurry contacts the wafer surface. In a preferred embodiment, ultrasonic transducers are connected inline with the dispense line to provide the acoustic energy necessary to break apart the agglomerated particles in the slurry. Also the wafer carrier and the polishing pad are aligned along noncoincident parallel axes and are both rotated or translated in parallel planes to mechanically abrade the wafer surface against the polishing pad. In the practice of the invention, an acoustic energy source is positioned relative to, and preferably inline with, the dispense line and acoustic energy is generated to break up agglomerated particles in the polishing slurry, as the slurry flows through the dispense line before being dispensed onto the polishing pad.
REFERENCES:
patent: 4171852 (1979-10-01), Haentjens
patent: 4872353 (1989-10-01), Orr, Jr. et al.
patent: 5035363 (1991-07-01), Somoza
patent: 5240552 (1993-08-01), Yu et al.
patent: 5245790 (1993-09-01), Jerbic
patent: 5399234 (1995-03-01), Yu et al.
patent: 5522965 (1996-06-01), Chisholm et al.
patent: 5527423 (1996-06-01), Neville et al.
patent: 5531861 (1996-07-01), Yu et al.
Chen Kin-Chan
Micro)n Technology, Inc.
Utech Benjamin L.
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