Use of silicide to bridge unwanted polycrystalline silicon P-N j

Details Use of silicide to bridge unwanted polycrystalline silicon P-N j Use of silicide to bridge unwanted polycrystalline silicon P-N j

1980-02-04

1982-06-01

Clawson, Jr., Joseph E.

357 23, 357 42, 357 59, 357 86, H01L 2904, H01L 2348

Patent

active

043330991

ABSTRACT:
Polysilicon lines are utilized for interconnecting the various elements of CMOS devices. The polysilicon lines are doped with whatever dopant conveniently suits the processing step, to form an undesired PN junction. The junction is electrically short-circuited, preferably by a polysilicided section extending across the junction.

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patent: 3658586 (1972-04-01), Wang
patent: 3881971 (1975-05-01), Greer et al.
patent: 4012762 (1977-03-01), Abe et al.
patent: 4041518 (1977-08-01), Shimizu et al.
patent: 4141022 (1979-02-01), Sigg et al.

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