Device for creating a deposit of silicon oxide on a traveling so

Chemical apparatus and process disinfecting – deodorizing – preser – Chemical reactor – With means applying electromagnetic wave energy or...

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42218623, 42218605, 422907, B01J 1908

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active

057531935

ABSTRACT:
A device for creating a deposit of silicon oxide on a traveling solid substrate, wherein the substrate is subjected to an electrical discharge with a dielectric barrier in the presence of a controlled atmosphere containing a silane and an oxidizing gas, the atmosphere being at a pressure higher than 10,000 Pa, and wherein the atmosphere is maintained in the immediate vicinity of an electrode in the region where the electrical discharge is produced and further wherein any entrainment of oxygen other than that forming part of the atmosphere in the region is prevented.

REFERENCES:
patent: 4419869 (1983-12-01), Sando et al.
patent: 5424103 (1995-06-01), Ahn
Patent Abstracts of Japan, vol. 7, No. 40, Feb. 17, 1983 & JP-A-57 192 032 Hitachi Seisakusho KK, Nov. 16, 1982.
Patent Abstracts of Japan, vol. 8, No. 15, Jan. 21, 1884 & JP-A-58 181 865 (Citizen Tokei KK), Oct. 24, 1983.
"A Production Reaction for Continuous Deposition of Silicon Dioxide," W.C. Benzing et al., Solid State Technology, vol. 16, No. 11, Nov. 1973, pp. 37-42.

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