Semiconductor laser including ridge confining buffer layer

Details Semiconductor laser including ridge confining buffer layer Semiconductor laser including ridge confining buffer layer

1994-02-23

1995-06-20

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

054266580

ABSTRACT:
A semiconductor laser device including a semiconductor substrate; a plurality of semiconductor layers including an AlGaAs layer epitaxially grown on said semiconductor substrate; a ridge having a reverse mesa shape and opposed sides formed of said plurality of semiconductor layers; an Al.sub.x Ga.sub.1-x As low temperature buffer layer (0.ltoreq..times..ltoreq.1) disposed on said AlGaAs layer at opposite sides of said ridge; a first semiconductor layer epitaxially disposed on said low temperature buffer layer at opposite sides of said ridge; and a second semiconductor layer epitaxially disposed on said ridge and said first semiconductor layer.

REFERENCES:
patent: 5146295 (1992-09-01), Imanaka et al.
Suzuki et al, "Low-Noise Semiconductor Laser For Optical Pick-up", 1985, pp. 576-578 (No Month).
Mitsubishi Denki Giho, vol. 62, No. 11, 1988, pp. 958-961 (No Month).
Shimoyama et al, "A New Selective MOVPE Regrowth Process Utilizing In-Situ Vapor Phase Etching For Optoelectronic Integrated Circuits", Metalorganic Vapor Phase Epitaxy 1990, pp. 767-771 (No Month).

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