Quantum well optical electric field biased nonlinear method and

Details Quantum well optical electric field biased nonlinear method and Quantum well optical electric field biased nonlinear method and

1987-10-15

1989-11-14

LaRoche, Eugene R.

350356, G02F 1015

Patent

active

048802972

ABSTRACT:
Optically transparent quantum well structures, such as GaAs/Al.sub.0.5 Ga.sub.0.5 As, are electrically biased to produce a quadratic nonlinear optical susceptibility, the sign of which depends on the direction of the applied electric bias field. This quadratic nonlinear optical susceptibility is particularly useful for enhancing three-wave interactions especially when the applied bias field is made spatially periodic to obtain quasiphasematched interaction. Also, the quantum well material is preferably arranged in an optical waveguide for guiding the interacting waves to reduce unwanted diffraction effects.

REFERENCES:
patent: 3758194 (1973-09-01), Daval et al.
patent: 4518934 (1985-05-01), Venkatesan
patent: 4696533 (1987-09-01), Kingston et al.
Wood et al., "High-Speed Optical Modulation with GaAs/GaAlAs Quantum Wells in a p-i-n Diode Structure", Appl. Phys. Lett. 44(1), Jan. 1, 1984, pp. 16-18.

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