Method of making a non-volatile memory cell

Details Method of making a non-volatile memory cell Method of making a non-volatile memory cell

1991-08-30

1993-11-23

Thomas, Tom

Fishing, trapping, and vermin destroying

437 26, 437 44, 437 48, 437 52, H01L 2170

Patent

active

052643840

ABSTRACT:
In one embodiment, a non-volatile memory cell structure 10 comprises heavily doped source 11 and drain 12 regions formed in the surface of a semiconductor substrate 8 and separated by a channel region 21. A floating gate 13 is formed over and insulated from the channel region 21 and a control gate 14 is formed over and insulated from the floating gate 13. A lightly doped region 20 is formed in the channel 21 beneath the floating gate 13 and adjoining the source region 11. The lightly doped region 20 is spaced from the surface of said substrate 8. Other embodiments and processes are also disclosed.

REFERENCES:
patent: 4306915 (1981-12-01), Shiba

Affiliated with

Also associated with

Rating

Method of making a non-volatile memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a non-volatile memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a non-volatile memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1848572