Static memory cell using field implanted resistance

Details Static memory cell using field implanted resistance Static memory cell using field implanted resistance

1978-05-30

1980-02-12

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29577R, 357 59, 29576C, B01J 1700

Patent

active

041876024

ABSTRACT:
A cell for a semiconductor memory of the static type employs two conventional MOS transistors along with a field implanted resistance which functions as a grounded-gate junction FET. Along with other resistor elements, these devices provide a grounded-gate amplifier with voltage gain and a source follower, creating a circuit which is stable with either a "1" or "0" stored. No clock or other refresh circuitry is needed.

REFERENCES:
patent: 3570114 (1971-03-01), Bean
patent: 3889358 (1975-06-01), Bierhenke
patent: 3996657 (1976-12-01), Simko
patent: 4033026 (1977-07-01), Pashley

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