Method of making an MOS transistor having improved transconducta

Details Method of making an MOS transistor having improved transconducta Method of making an MOS transistor having improved transconducta

1989-12-18

1993-11-23

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 41, 437 44, H01L 21336

Patent

active

052643808

ABSTRACT:
A transistor is described having reduced series resistance and a reduced peak lateral electric field. The peak lateral field is reduced by forming an image charge in the surface of the substrate underlying the edges of the transistor gate electrode. The image charge is created by impregnating portions of an oxide layer overlying the source and drain regions with an impurity having the same conductivity as that of the underlying substrate. The depletion region formed in the substrate by the image charge provides a graduated electric filed in the channel preventing hot carrier injection into the gate oxide and increasing the breakdown voltage. The image charge is of an opposite conductivity to that of the substrate and is thus composed of minority carriers. The high concentration of majority carriers near the surface of the substrate lower the series resistance of the transistor thereby increasing the drive current.

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