Method of eliminating lattice defects in a semiconductor device

Details Method of eliminating lattice defects in a semiconductor device Method of eliminating lattice defects in a semiconductor device

1980-04-14

1982-06-01

Roy, Upendra

Metal treatment

Compositions

Heat treating

148186, 148187, 357 13, 357 91, H01L 21265, H01L 314, B01J 1700

Patent

active

043326277

ABSTRACT:
The invention relates to a semiconductor device and to a method of fully eliminating lattice defects in N-conductive zones of a semiconductor device which are generated by ion implantation of phosphorus. According to the invention, conductivity-determining ions like antimony or arsenic are implanted into phosphorus-doped zones of a semi-conductor device. A dosage of 1 to 10% of the phosphorus dose is used. The implantation of the antimony or arsenic takes place with the same, or with a greater implantation depth than the phosphorus depth. Subsequent to the antimony/arsenic implantation the device is annealed in an inert gas atmosphere at approximately 1000.degree. C.

REFERENCES:
patent: 3793093 (1974-02-01), Nishizawa et al.
patent: 3812519 (1974-05-01), Nakamura et al.
patent: 3834953 (1974-09-01), Nakamura et al.
patent: 3852119 (1974-12-01), Gosney et al.
patent: 4060427 (1977-11-01), Barile et al.
patent: 4118250 (1978-10-01), Horng et al.
patent: 4135292 (1979-01-01), Jaffe et al.
patent: 4144100 (1979-03-01), MacIver
Yonezewa et al. in Semiconductor Silicon, 1977 ed., Huff et al., The Electrochem. Soc., Princeton, N.J., pp. 658-675.
Aggarwal, IBM-TDB, 19 (1976) 162.
Edel et al., IBM-TDB, 13 (1970) 632.
Kirchner, Jour. Appl. Phys. 46 (1975) 2167.
Neues Aus Der Technik, 3 (1978) Zusammenfassung #465.
Dinklage et al., IBM-TDB, 19 (1977) 4091.

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