Chemical-mechanical polishing station with end-point monitoring

Abrading – Precision device or process - or with condition responsive... – By optical sensor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

451288, B24B 4912, B24B 722

Patent

active

06077147&

ABSTRACT:
A chemical-mechanical polishing station for polishing wafers. The polishing station comprises a slurry supplier, a polishing pad capable of collecting the slurry, and a polishing head capable of rotating a wafer and lowering the wafer onto the polishing pad in contact with the polishing pad and the slurry during a polishing session. The polishing head further includes a retaining ring for positioning the wafer. The retaining ring houses a light-emitting device capable of shining a beam of light onto the slurry and a light sensor for picking up the beam of light reflected back from the slurry. The exact polishing end-point can be decided by analyzing signals obtained from the light sensor.

REFERENCES:
patent: 5643048 (1997-07-01), Iyer
patent: 5836805 (1998-11-01), Obeng
patent: 5851136 (1998-12-01), Lee

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Chemical-mechanical polishing station with end-point monitoring does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical-mechanical polishing station with end-point monitoring , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical-mechanical polishing station with end-point monitoring will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1847577

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.