Transverse light emitting electroluminescent devices

Details Transverse light emitting electroluminescent devices Transverse light emitting electroluminescent devices

1979-09-13

1982-01-05

Davie, James W.

Oscillators

Molecular or particle resonant type

357 17, H01S 319

Patent

active

043096700

ABSTRACT:
Improved lateral carrier and optical confinement is achieved in heterostructure diodes and lasers having a Fabry-Perot cavity transverse to the plane of the p-n junction of the device. Structural features during fabrication improve carrier confinement to the active region in the established optical cavity. Current confinement means is also fabricated above and below the active region to concentrate the current density to the active region in the optical cavity and thereby improve the overall gain of the device. Such confinement also enhances optical confinement along the cavity. Several reflector structures are disclosed for employment at the cavity ends to provide optical feedback.

REFERENCES:
patent: 3936855 (1976-02-01), Goell et al.
patent: 4010483 (1977-03-01), Liu
patent: 4053914 (1977-10-01), Goodwin
patent: 4081763 (1978-03-01), Vlasenko et al.
patent: 4212021 (1980-02-01), Ono et al.
Shimano et al., "Observation of Internal Interference in the Emission Spectrum of the Burrus Type GaAs-GaAlAs DH LED's with Thin Active Layer", Japan J. Appl. Phys., vol. 17, No. 1, 1978, pp. 237-238.
Dyment et al., "Top and Side Emission from Double Heterostructure LED's and Laser's", IEEE Trans. Electron Devices, ED-24, No. 7, Jul. 1977, pp. 995-1000.

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