Thin film transistor array having optical shield layer

Details Thin film transistor array having optical shield layer Thin film transistor array having optical shield layer

1994-04-22

1995-06-20

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 72, 257349, 359 59, G02F 1133

Patent

active

054263131

ABSTRACT:
In a thin film transistor formed by a gate electrode formed on a transparent insulating substrate, a semiconductor active layer opposing the gate electrode, a drain electrode, and a source electrode connected to a transparent pixel electrode, an optical shield layer is located so as to approximately surround the semiconductor active layer.

REFERENCES:
patent: 4904056 (1990-02-01), Castleberry
patent: 5237436 (1993-08-01), Khan et al.
G. Kawachi et al., "A Novel Technology for a-Si TFT-LCDs with Buried ITO Electrode (BI) Structure", Japan Display, 1992, pp. 635-638.

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