Fishing – trapping – and vermin destroying
Patent
1994-08-18
1995-06-20
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 69, 437 72, 148DIG50, H01L 2176
Patent
active
054260671
ABSTRACT:
A method for manufacturing a semiconductor device in which an opening is formed in an insulation film laid on a semiconductor substrate, and in which an annular trench that is narrower than a minimum width obtained by lithography is formed in the semiconductor substrate along the opening in a self-aligned manner. The method includes the steps of: forming a first insulation film on a main surface of a semiconductor substrate; forming an opening in the first insulation film; forming an annular film along the inner sidewall of the opening; forming a second insulation film on the surface of the semiconductor substrate surrounded by the annular film; removing the annular film to cause the semiconductor substrate to be annularly exposed; forming an annular trench by etching the exposed area of the semiconductor substrate; and forming a film layer containing at least a third insulation film over the entire main surface of the semiconductor substrate including the inside of the annular trench.
REFERENCES:
patent: 4546538 (1985-10-01), Suzuki
patent: 5004703 (1991-04-01), Zdebel et al.
patent: 5229315 (1993-07-01), Jun et al.
patent: 5254218 (1993-10-01), Roberts et al.
patent: 5256592 (1993-10-01), Matsushita
patent: 5308784 (1994-05-01), Kim et al.
Dang Trung
Hearn Brian E.
NEC Corporation
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