Method of making electrically programmable control gate injected

Metal working – Method of mechanical manufacture – Assembling or joining

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Details

29576B, 29580, 29591, 148187, H01L 2126

Patent

active

043320775

ABSTRACT:
A non-volatile memory structure of the floating gate type is described wherein current carriers are injected onto the floating gate from the control gate as distinguished from the prior art which injects current carriers into the floating gate from the substrate. This invention teaches that by tailoring the capacitance between the control gate and the floating gate and the capacitance between the floating gate and the substrate different field intensities are created in the region between the floating gate and the control gate and in the region between the substrate and the floating gate. When the field intensity across the capacitor formed between the control gate and the floating gate is greater than the field intensity across the capacitor formed between the floating gate and the substrate, current carriers will be injected onto the floating gate from the control gate.

REFERENCES:
patent: 4259779 (1981-04-01), Ipri et al.
patent: 4272880 (1981-06-01), Pashley
patent: 4295265 (1981-10-01), Horiuchi et al.
patent: 4296426 (1981-10-01), Gilles

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