Low thermal coefficient semiconductor device

Details Low thermal coefficient semiconductor device Low thermal coefficient semiconductor device

1980-01-16

1982-03-09

Rosenberger, R. A.

357 35, 357 46, H01L 2990

Patent

active

043192572

ABSTRACT:
A low thermal coefficient NPN bipolar transistor includes a reverse biased buried zener diode formed in the interior of an emitter ring. Thermal compensation results from the symmetry of the base region and the concentric base contact, emitter and collector contact rings about the buried zener diode. A P type region extends the depth of the base region below the zener diode to prevent reach through of the cathode to the collector.

REFERENCES:
patent: 3222610 (1965-12-01), Evans et al.
patent: 3244949 (1966-04-01), Hilbiber
patent: 3275846 (1966-09-01), Bailey
patent: 3323071 (1967-05-01), Mitchell
patent: 3440715 (1969-04-01), Seng
patent: 3567965 (1971-03-01), Weinerth
patent: 4035827 (1977-07-01), Wheatley
patent: 4138690 (1979-02-01), Nawa et al.

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