Semiconductor device and method of manufacturing the device

Details Semiconductor device and method of manufacturing the device Semiconductor device and method of manufacturing the device

1974-10-29

1976-12-21

James, Andrew J.

357 43, 357 50, 357 53, 357 59, H01L 2702

Patent

active

039992136

ABSTRACT:
A semiconductor device particularly suitable for ICs with complementary field effect transistors and/or bipolar circuit elements comprises a semiconductor body having a first type substrate region on which is a second type epitaxial layer of which a part is bounded by an inset insulating pattern. A first type zone adjoins the inset pattern and extends down to the substrate region. Source and drain zones of an IGFET adjoin the pattern and are provided in the said epitaxial part, and a further circuit element is provided in the said first type zone.

REFERENCES:
patent: 3340598 (1967-09-01), Hatcher
patent: 3432731 (1969-03-01), Whittier
patent: 3534234 (1970-10-01), Clevenger
patent: 3596115 (1971-07-01), Conzelmann et al.
patent: 3600648 (1971-08-01), Longo
patent: 3646665 (1972-03-01), Kim
patent: 3648125 (1972-03-01), Peltzer
patent: 3755001 (1973-08-01), Kool et al.
patent: 3755014 (1973-08-01), Appels et al.
patent: 3909318 (1975-09-01), Lecan et al.

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