FET having a linear impedance characteristic over a wide range o

Details FET having a linear impedance characteristic over a wide range o FET having a linear impedance characteristic over a wide range o

1974-09-09

1976-12-21

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, 357 59, 357 65, H01L 2978

Patent

active

039992101

ABSTRACT:
A FET is provided having a linear impedance characteristic over a wide range. It comprises a semiconductor substrate of one impurity type with source and drain regions formed in one surface thereof of opposite highly doped impurity type. An insulating layer overlies said one surface and is of a relative thin thickness between a point above said source region and a point above said drain region, and is of a relative thick thickness throughout the rest of its extent. A polycrystalline resistance layer overlies the insulating layer over its thin thickness portion and over some of the thick portion of the insulating layer lying above the source region. Source and drain electrodes are formed on the insulating layer and have portions thereof extending through windows in the insulating layer into contact with said source and drain regions respectively. A gate electrode is formed on the resistive layer above the thick portion of said insulating layer and extends back from the drain facing face of the source region by a predetermined distance.

REFERENCES:
patent: 3436622 (1969-04-01), Warner
patent: 3676921 (1972-07-01), Kool
patent: 3714522 (1973-01-01), Komiya et al.
C. Hu et al., "A Resistive-Gated IGFET Tetrode," IEEE Trans. on Electron Dev., vol. ED-18, No. 7 July 1971, pp. 418-425.

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