Field effect transistor with a carrier injecting region

Details Field effect transistor with a carrier injecting region Field effect transistor with a carrier injecting region

1974-06-19

1976-12-21

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 38, 307251, 307304, H01L 2980

Patent

active

039992071

ABSTRACT:
A semiconductor device includes a first semiconductive region of one conductivity type, a first electrode and a second electrode formed on said first semiconductive region, a second semiconductive region of the opposite conductivity type contiguous to a current path portion extending between said first electrode and said second electrode and a third semiconductive region of said one conductivity type contiguous to said second conductive region. In the semiconductor device, a voltage is applied between said first semiconductive region and said third semiconductive region to control conditions of said second semiconductive region. Carriers are electrically injected into said second semiconductive region from said first semiconductive region and/or said third semiconductive region. The conditions of said second semiconductive region varies with the injection of the carriers and the varying conditions are detected.

REFERENCES:
patent: 3453504 (1969-07-01), Compton et al.
patent: 3538399 (1970-11-01), Bresee et al.
patent: 3595715 (1971-07-01), Thire et al.
patent: 3597287 (1971-08-01), Koepp
patent: 3619737 (1971-11-01), Chiu
patent: 3649385 (1972-03-01), Kobayashi
patent: 3656031 (1972-04-01), Bresee et al.
patent: 3663873 (1972-05-01), Yagi
patent: 3755012 (1973-08-01), George et al.

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