Rectifier structure for a semiconductor integrated circuit devic

Details Rectifier structure for a semiconductor integrated circuit devic Rectifier structure for a semiconductor integrated circuit devic

1975-04-03

1976-12-21

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 40, 357 42, 357 44, 357 45, 307202R, 307285, H01L 2990, H01L 2702, H01L 2710, H01L 2715

Patent

active

039992055

ABSTRACT:
A rectifier structure which can be compatibly fabricated in a zone of one type conductivity in a monolithic semiconductor device includes side-by-side surface adjacent regions of mutually opposite type conductivity within and surrounded by a region of conductivity type opposite to that of the zone. A plurality of the rectifier structures may be connected in series. The regions making up the rectifiers may have the same depth and doping profile as regions making up CMOS transistors in the device.

REFERENCES:
patent: 3470390 (1969-09-01), Lin
patent: 3607465 (1971-09-01), Frouin
patent: 3667009 (1972-05-01), Rugg
patent: 3677838 (1972-07-01), De Drebisson
patent: 3882529 (1975-05-01), Warner
Electronics, Gate Protection Diode p. 42, Apr. 26, 1971.

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