Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

Filed on

1998-01-30

Date issued

2000-05-23

Examiner

Saadat, Mahshid

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Combined with electrical contact or lead

SubSubClass

Of specified material other than unalloyed aluminum

Other Related Categories

257750, 257756, 257755, 257758, 257382, 257385, H01L 2348, H01L 2352, H01L 2940

Type

Patent

Status

active

Patent number

060668946

Description

ABSTRACT:
A low-concentration impurity region and a high-concentration impurity region are formed respectively near the lower surface and the upper surface of an undoped polysilicon film by a first and second ion-implanations. A refractory metal film of tungsten or the like is formed on the polysilicon film. The impurities are thermally diffused to form shallow-junctions of source/drain having low-concentration impurities. Lead-out electrodes having a high-impurity concentration can be formed without impeding formation of the source and drain. The refractory metal film is converted into a silicide with the resistance at the interface between the polysilicon film and the silicide kept lowered.

REFERENCES:
patent: 5068710 (1991-11-01), Owada et al.
patent: 5623165 (1997-04-01), Yamauchi
Wong et al., Elevated Source/Drain Mosfet, Hewlett-Packard Laboratories, Palo Alto, CA, CH2099-0/84/0000-0634--1984 IEDM, pp-634-637.
Pfiester et al., Reverse Elevated Source/Drain (RESD) MOSFET for Deep Submicron CMOS, Advanced Products Research and Development Laboratory, Motorola Inc., Austin, TX, 0-7803-0817-4.92, 1992 IEEE, IEDM, pp. 885-888.

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