Method of writing cross pattern in adjacent areas of layer sensi

Details Method of writing cross pattern in adjacent areas of layer sensi Method of writing cross pattern in adjacent areas of layer sensi

1998-08-24

2000-05-23

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25045223, H01J 37304

Patent

active

060668547

ABSTRACT:
A data processor compares a length of a pattern to be written into a layer sensitive to a charged particle beam with a critical length equal to the maximum length of a cross section of the charged particle beam or the maximum length of a variable sub-field to see whether or not the pattern is written through a radiation of the maximized cross section or through a radiation onto the maximized sub-field, and a main deflector and a sub-deflector guide a shot of charged particle beam to the layer if the answer is positive so that the pattern is prevented from deformation due to a low stitching accuracy.

REFERENCES:
patent: 5349197 (1994-09-01), Sakamoto et al.
patent: 5438207 (1995-08-01), Itoh et al.
patent: 5523580 (1996-06-01), Davis

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