Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1976-07-15
1978-10-31
Larkins, William D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 13, 357 41, 357 54, 307238, H01L 2978, H01L 2702, H01L 2934, H03K 500
Patent
active
041237714
ABSTRACT:
A nonvolatile semiconductor memory having an insulated gate field effect transistor whose structure is so made as to permit, during the write operation, a substrate surface region below the gate to be substantially enclosed by depletion layers extended from the source and drain regions or by said depletion layers and a channel formed between said regions, thereby increasing a resistance between the substrate and said substrate surface region to decrease the writing current in amount and the writing voltage in level.
REFERENCES:
patent: 3345216 (1967-10-01), Rodgers et al.
patent: 3513364 (1970-05-01), Heiman
patent: 3718916 (1973-02-01), Wada et al.
patent: 3797000 (1974-03-01), Agusta
patent: 3868187 (1975-02-01), Masuoka
patent: 3868721 (1975-02-01), Davidsohn
patent: 3893151 (1975-07-01), Bosselaar et al.
patent: 4019198 (1977-04-01), Endo et al.
Terman "Floating Aualance-Injection Metal-Oxide Semiconductor Device with Low Write Voltage" IBM Tech. disclosure bulletin vol. 14(5/72)p. 3721.
Anantha et al., "Single Fet Memory Cell with Buried Extended Source" IBM Tech. Disclosure Bulletin vol. 16 (1/74) p. 2708-2709.
Larkins William D.
Munson Gene M.
Tokyo Shibaura Electric Co. Ltd.
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