Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1975-11-24
1976-12-21
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29578, 29580, 148 15, 156 17, 156612, 357 50, 357 60, H01L 2176, H01L 2120
Patent
active
039986748
ABSTRACT:
An improved method for forming a recessed thermal SiO.sub.2 isolation region in a monocrystalline silicon semiconductor body having a major surface lying in a (100) plane as defined by the Miller indices by forming an etch resistant and oxidation resistant masking layer on the major surface of the body, forming at least one rectilinear annular opening in the masking layer, the opening being oriented with the sides parallel to the [100] directions on the major surface, removing a portion of the exposed body by anisotropic chemical etching, and oxidizing the resultant exposed portions of the body until the surface of the resultant SiO.sub.2 and major surface are substantially coplanar.
A semiconductor device including a silicon substrate of a first conductivity, the major surface being in the (100) plane, an epitaxial silicon layer on the substrate, a lateral PN junction in the substrate, at least one annular rectangular shaped recessed SiO.sub.2 region in the epitaxial layer extending inwardly to the PN junction, the annular region being oriented with the sides parallel to the [100] direction on the major surface.
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Cameron Donald P.
Tsang Paul J.
International Business Machines - Corporation
Rutledge L. Dewayne
Saba W. G.
Stoffel Wolmar J.
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