Method of producing infrared luminescent diodes

Details Method of producing infrared luminescent diodes Method of producing infrared luminescent diodes

1975-12-30

1976-12-21

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148 335, 29580, 357 17, 156 17, 252 623GA, H01L 21208

Patent

active

039986721

ABSTRACT:
A recess is formed in one of the principal surfaces of an N-type substrate of GaAs. Through the liquid phase growth technique, a silicon-doped N-type GaAs layer is formed on the one of the principal surfaces and on the surface of the recess and a silicon-doped P-type GaAs layer is continuously formed on the N-type GaAs layer. The liquid-phase-grown GaAs layers are so cut that the PN junction between the layers may be exposed on a plane.

REFERENCES:
patent: 3647578 (1972-03-01), Barnett et al.
patent: 3740276 (1973-06-01), Bean
patent: 3764409 (1973-10-01), Nomura et al.
patent: 3783351 (1974-01-01), Tsukada et al.
patent: 3793712 (1974-02-01), Bean et al.
patent: 3813585 (1974-05-01), Tarui et al.
patent: 3832225 (1974-08-01), Matsui et al.
patent: 3849790 (1974-11-01), Gottsmann et al.

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