Patent
1988-05-02
1989-04-04
Carroll, J.
357 34, 357 49, 357 56, H01L 2972, H01L 2712, H01L 2906, H01L 2904
Patent
active
048190551
ABSTRACT:
The invention deals with a semiconductor device which comprises a semiconductor substrate of a first conductivity type, a semiconductor region formed on said substrate, and a first insulation film provided between said semiconductor region and said semiconductor substrate, wherein said semiconductor substrate is isolated by said insulation film from a polycrystalline silicon layer formed in the periphery of said semiconductor region thereby to reduce the parasitic capacitance, and wherein said insulation film is stretched and arranged on the lower side of said semiconductor region.
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Miyazaki Takao
Nagata Minoru
Nakamura Tohru
Nakazato Kazuo
Natsuaki Nobuyoshi
Carroll J.
Hitachi , Ltd.
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