Method for manufacturing a capacitor of a semiconductor device

Details Method for manufacturing a capacitor of a semiconductor device Method for manufacturing a capacitor of a semiconductor device

1998-08-28

2000-05-23

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438 3, 438240, 438643, H01L 2120

Patent

active

060665408

ABSTRACT:
A method for manufacturing a capacitor of semiconductor device is provided, which method has the steps of providing a semiconductor substrate; forming a intermediate insulating film having a contact plug on the semiconductor substrate; forming a tungsten nitride film as an diffusion barrier film on the intermediate insulating film including the contact plug; and forming a stack structure of a lower electrode, a dielectric layer and an upper electrode on the tungsten nitride film. So, the destruction of diffusion protection film due to the tension stress can be protected and the reaction of silicide between the electrode material and the contact plug which is a polysilicon can be controlled since the tungsten nitride film has an excellent diffusion protection property so that the property deterioration of the device can be protected, the characteristic and reliability of semiconductor device can be improved and then large scale integration of semiconductor device can be embodied.

REFERENCES:
patent: 5121174 (1992-06-01), Forgerson, II et al.
patent: 5670808 (1997-09-01), Nishihori et al.
patent: 5877062 (1999-03-01), Horii
patent: 5913145 (1999-06-01), Lu et al.

Affiliated with

Also associated with

Rating

Method for manufacturing a capacitor of a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a capacitor of a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a capacitor of a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1836605