Extended drain self-aligned silicon gate MOSFET

Details Extended drain self-aligned silicon gate MOSFET Extended drain self-aligned silicon gate MOSFET

1980-01-30

1982-03-09

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 148187, 357 23, H01L 2126

Patent

active

043182160

ABSTRACT:
A Metal-Oxide-Semiconductor-Field Effect Transistor (MOSFET) is described wherein a body of semiconductor material is provided with source, drain and channel regions. A gate structure is provided over the interstitial channel region of the semiconductor body between the drain and source regions, one edge of which is aligned with the source region. The remainder of the channel region, between the other edge of the gate structure and the adjacent edge of the drain region is provided with a drift region of a conductivity type that is the same as the source and drain.

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patent: 4232327 (1980-04-01), Hsu
patent: 4236167 (1980-11-01), Woods

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