Semiconductor memory device with parallel addressing and data-co

Excavating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

371 49, 371 13, G06F 1110

Patent

active

046726144

ABSTRACT:
An improved error-correction type semiconductor memory device operates at high speed. The memory is provided with a pair of row address buffers which can operate independently, and when error correcting operation is performed for the data related to the address contents of one of the buffers, the access operation of the data cell array is conducted by the other of the buffers, thereby enabling the memory device to simultaneously carry out parts of the operation of successive read-out operations.

REFERENCES:
patent: 4360917 (1982-11-01), Sindelar
patent: 4453251 (1984-06-01), Osman
patent: 4464755 (1984-08-01), Stewart
patent: 4472805 (1984-09-01), Wacyk
patent: 4528666 (1985-07-01), Cline

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device with parallel addressing and data-co does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device with parallel addressing and data-co, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with parallel addressing and data-co will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1834561

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.