Semiconductor laser with semi-insulating current blocking layers

Details Semiconductor laser with semi-insulating current blocking layers Semiconductor laser with semi-insulating current blocking layers

1994-06-08

1995-09-19

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

H01S 318

Patent

active

054523150

ABSTRACT:
A semiconductor laser includes a semiconductor substrate of a first conductivity type having opposite front and rear surfaces, a double-heterojunction structure including a first conductivity type lower cladding layer, an undoped active layer, and an upper cladding layer of a second conductivity type, opposite the first conductivity type, successively disposed on the front surface of the semiconductor substrate wherein the double-heterojunction structure is a mesa having opposite sides, and a light and current confinement structure disposed on the opposite sides of the mesa for confining laser light and laser driving current within the mesa. The confinement structure includes a first conductivity type mesa embedding layer, a second conductivity type mesa embedding layer, and a semi-insulating InP layer which are successively disposed on the semiconductor substrate contacting the opposite sides of the mesa. In this structure, since the semi-insulating semiconductor layer is not in contact with the active layer, unfavorable diffusion of impurities contained in the semi-insulating layer into the active layer is prevented.

REFERENCES:
patent: 4928285 (1990-05-01), Kushibe et al.
patent: 4935936 (1990-06-01), Nelson et al.
patent: 5228048 (1993-07-01), Takemoto et al.
patent: 5390205 (1995-02-01), Mori et al.

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