MOS transistor for withstanding a high voltage

Details MOS transistor for withstanding a high voltage MOS transistor for withstanding a high voltage

1987-09-17

1989-04-04

Wojciechowicz, Edward J.

357 20, 357 238, 357 239, 357 2311, 357 52, 357 55, H01L 2978

Patent

active

048190454

ABSTRACT:
An improved lateral MOS transistor with higher withstand voltage is shown. The transistor is provided with a drift region (19) formed so as to surround a drain region (7) thereof. The curved sections (7b) of the drain region (7) are joined with the drift region (19) whose impurity density is chosen lower than that of the drain region (19).

REFERENCES:
patent: 4334235 (1982-06-01), Nishizawa
patent: 4422089 (1983-12-01), Vaes et al.
patent: 4561168 (1985-12-01), Pitzer et al.

Affiliated with

Also associated with

Rating

MOS transistor for withstanding a high voltage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS transistor for withstanding a high voltage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS transistor for withstanding a high voltage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-183335